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Metal halide perovskites represent a promising class of gain media for next‐generation nonepitaxial laser diodes. However, fully electrically pumped perovskite laser diodes have not been achieved yet. Herein, the use of sodium fluoride (NaF) is explored as an efficient additive in halide perovskite films to improve their optical and light amplification properties. The incorporation of NaF in perovskites leads to a remarkable threefold increase in light‐emitting intensity. The threshold of amplified spontaneous emission (ASE) by optical pumping is reduced by more than 20%, from ≈13.5 to 10.4 μJ cm⁻². Furthermore, the NaF‐modified perovskites exhibit stable ASE emission, even after exposure to 1.5 billion optical pulses, highlighting substantial improvements in the material's photostability. Finally, optically pumped ASE is observed from a full perovskite light‐emitting diode stack, including lossy metal electrodes. This work demonstrates significant progress toward the development of electrically pumped perovskite lasers. 

Electrochemical‐based memristors are highly attractive that are capable of nonvolatile analog tuning, long‐term state stability, low power consumption, device scalability, and fast switching speeds. Through the combination of film deposition techniques, i.e., vapor phase polymerization and screen printing, fabrication of a poly(4‐(6‐hexyl)‐4H‐dithieno[3,2‐b:2′,3′‐d]pyrrole) (p6DTP)‐based synaptic‐emulating three‐terminal memristor is designed. Through voltage‐driven pulse programming, and square waves with an amplitude of 100 mV and duration of 100 msec, the device exhibits a power consumption of 1 pJmm⁻²per synaptic event. By analyzing the fundamental operational trends of the p6DTP‐based device, simple and advanced integrated applications can be demonstrated along with synaptic‐like responses. This effort is the first presentation of the vapor phase polymerization technique for any dithienopyrrole‐based monomers, along with the physical implementation of any memristive system as an advanced logical circuit, demonstrated here as a cascaded combinational logic gate.